RAM (Random Access Memory)
Memory that can be accessed and written to randomly (by address location). The Northbridge/Memory Controller Hub coordinate these functions.
DDR2 SDRAM
Uses “double pumping” like DDR but has a faster I/O bus
Theoretical memory throughput quadruples basic SDRAM
Typically has a higher CAS latency than regular DDR (slower access time by the memory controller hub and more CPU cycles pass before getting the data)
Uses less power than DDR modules
4-bit Prefetch
Parity RAM
An additional bit is added for every byte of data stored in RAM. Basic comparison tests can be done with these extra bits to determine if a sequence of bytes are bad or not.
Can only detect errors, not correct them.
CAS Latency (CL) is generally worse than non-parity RAM
Not really used anymore
Registered Memory
Additional memory chips are added to act as a buffer
The buffer regulates data traffic flow over the memory bus
More expensive than non-buffered RAM modules
Typically found in workstations and servers
Dual-Channel
The Northbridge/Memory controller hub uses two data channels to transmit data
The theoretical throughput is doubled on top of what DDR or DDR2 modules might provide
Matching pairs must occupy memory slots for this architecture to provide any bandwidth benefits
ROM (Read-only Memory)
Memory that can be read only. The term is a bit misleading in that all but one type of ROM permits some sort of additional writing.
ROM - Can only be read and not written to except by the manufacturer of the chip.
PROM (Programmable ROM) - Can be written to once.
EPROM (Erasable Programmable ROM) - Can be written to and erased using UV light.
EEPROM (Electrically Erasable Programmable ROM) - Can be written to and erased electrically. This type of ROM is also known as Flash memory.